Nitride-Based UV-LEDs and Their Application

Design and Performance of Nitride-based UV LEDs

In this paper, we overview several of the critical materials growth, design and performance issues for nitride-based UV (< 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent l]ilotoiull~inesccncc studies of various IJV active regions. These studies demonstrate enhanced optical efficiencies for active regions with Incontaining alloys ( InGrN, AIInGa...

Impurity Influence on Nitride LEDs

Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN...

Maskless photolithography using UV LEDs.

A UV light emitting diode (LED) with a maximum output of 372 nm was collimated using a pinhole and a small plastic tube and focused using a microscope objective onto a substrate for direct lithographic patterning of the photoresist. Movement of the substrate with a motorised linear stage (syringe pump) allowed lines in SU-8 to be pattered with a width down to 35 microm at a linear velocity of 8...

Growth of III-nitride quantum dots and their applications to blue-green LEDs

Nitride micro-LEDs and beyond--a decade progress review.

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid in...